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SUD40N02-08
Vishay Siliconix
N-Channel 20-V (D-S), 175 _ C MOSFET
PRODUCT SUMMARY
V DS (V) r DS(on) ( W )
0.0085 @ V GS = 4.5 V
20
0.014 @ V GS = 2.5 V
TO-252
Drain Connected to Tab
I D (A) a
40
40
G
D
FEATURES
D TrenchFET r Power MOSFET
D 175 _ C Maximum Junction Temperature
D 100% R g Tested
G
D
S
Top View
Order Number:
SUD40N02-08
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T A = 25 _ C UNLESS OTHERWISE NOTED)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Symbol
V DS
V GS
Limit
20
" 12
Unit
V
Continuous Drain Current a
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T C = 25 _ C
T C = 100 _ C
T C = 25 _ C
T A = 25 _ C
I D
I DM
I S
P D
T J , T stg
40
40
100
40
71
8.3 b, c
- 55 to 175
A
W
_ C
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec.
Symbol
Typical
15
Maximum
18
Unit
Maximum Junction-to-Ambient b
Maximum Junction-to-Case
Steady State
R thJA
R thJC
40
1.75
50
2.1
_ C/W
Notes
a. Package Limited
b. Surface Mounted on 1” x 1” FR4 Board
c. t v 10 sec
Document Number: 71422
S-31724—Rev. B, 18-Aug-03
www.vishay.com
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